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| 2SB1223_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=-5mA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=
VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-4mA
VBEsat Base-emitter saturation voltage
IC=-2A ; IB=-4mA
ICBO
Collector cut-off current
VCB=-40V;IE=0
IEBO
Emitter cut-off current
VEB=-5V;IC=0
hFE
DC current gain
IC=-2A ; VCE=-2V
fT
Transition frequency
IC=-2A ; VCE=-5V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=500IB1=-500IB2=-2A
VCC=-20V ,RL=10
Product Specification
2SB1223
MIN TYP. MAX UNIT
-70
V
-60
V
-1.0 -1.5
V
-2.0
V
-0.1 mA
-3.0 mA
2000 5000
20
MHz
0.5
s
1.4
s
1.2
s
2
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