2SB1193 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – For Midium-Speed Power Switching

JMnic
Silicon PNP Power Transistors
Product Specification
2SB1193
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO(SUS) Collector-emitter sustaining voltage IC=-2A; RBE= ;L=10mH
V_(BR)EBO Emitter-base breakdown voltage
I_E=-50mA; I_C=0
V_CEsat-1 Collector-emitter saturation voltage I_C=-4A ;I_B=-8mA
V_CEsat-2 Collector-emitter saturation voltage I_C=-8A ;I_B=-80mA
V_BEsat-1 Base-emitter saturation voltage
I_C=-4A ;I_B=-8mA
V_BEsat-2 Base-emitter saturation voltage
I_C=-8A ;I_B=-80mA
I_CBO
Collector cut-off current
V_CB=-120V; I_E=0
I_CEO
Collector cut-off current
V_CE=-100V; R_BE=
h_FE
DC current gain
I_C=-4A ; V_CE=-3V
Switching times
t_on
Turn-on time
t_stg
Storage time
t_f
Fall time
I_C=-4A ;I_B1=-I_B2=-8mA
V_CC=-50V
MIN TYP. MAX UNIT
-120
V
-7
V
-1.5
V
-3.0
V
-2.0
V
-3.5
V
-100
A
-10
A
1000
20000
0.7
s
3.5
s
2.0
s
2