2SB1102_2014 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=-25mA ,I_B=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=-50mA ,I_C=0
V_{CEsat -1} Collector-emitter saturation voltage I_C=-2A; I_B=-4mA
V_{CEsat -2} Collector-emitter saturation voltage I_C=-4A; I_B=-40mA
V_BEsat-1 Base-emitter saturation voltage
I_C=-2A; I_B=-4mA
V_BEsat-2 Base-emitter saturation voltage
I_C=-4A; I_B=-40mA
I_CBO
Collector cut-off current
V_CB=-60V; I_E=0
I_CEO
Collecto cut-off current
V_CE=-50V; I_B=0
h_FE
DC current gain
I_C=-2A ; V_CE=-3V
V_D
Diode forward voltage
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
I_D=4A;
I_C=-2A I_B1=-I_B2=-4mA
Product Specification
2SB1102
MIN TYP. MAX UNIT
-80
V
-7
V
-1.5
V
-3.0
V
-2.0
V
-3.5
V
-100
A
-10
A
1000
20000
3.0
V
0.8
s
4.0
s
1.0
s
2