2SB1021 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – 2SB1021

JMnic
Silicon PNP Power Transistors
Product Specification
2SB1021
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=-50mA; I_B=0
V_CEsat-1 Collector-emitter saturation voltage I_C=-3A ;I_B=-6mA
V_CEsat-2 Collector-emitter saturation voltage I_C=-7A ;I_B=-14mA
V_BEsat Base-emitter saturation voltage
I_C=-3A ;I_B=-6mA
I_CBO
Collector cut-off current
V_CB=-80V; I_E=0
I_EBO
Emitter cut-off current
h_FE-1
DC current gain
h_FE-2
DC current gain
Switching times
V_EB=-5V; I_C=0
I_C=-3A ; V_CE=-3V
I_C=-7A ; V_CE=-3V
t_on
Turn-on time
t_stg
Storage time
t_f
Fall time
I_B1=-I_B2=-6mA; V_CC -45V
R_L=15
MIN TYP. MAX UNIT
-80
V
-1.5
V
-2.0
V
-2.5
V
-100
A
-4.0
mA
2000
15000
1000
0.8
s
2.0
s
2.5
s
2