2SB1020 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

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Silicon PNP Power Transistors
Product Specification
2SB1020
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
V_(BR)CEO Collector-emitter breakdown voltage
V_CEsat-1 Collector-emitter saturation voltage
V_CEsat-2 Collector-emitter saturation voltage
V_BEsat Base-emitter saturation voltage
I_CBO
Collector cut-off current
I_EBO
Emitter cut-off current
h_FE-1
DC current gain
h_FE-2
DC current gain
Switching times
t_on
Turn-on time
t_stg
Storage time
t_f
Fall time
CONDITIONS
I_C=-50mA; I_B=0
I_C=-3A ;I_B=-6mA
I_C=-7A ;I_B=-14mA
I_C=-3A ;I_B=-6mA
V_CB=-100V; I_E=0
V_EB=-5V; I_C=0
I_C=-3A ; V_CE=-3V
I_C=-7A ; V_CE=-3V
I_B1=-I_B2=-6mA
V_CC=-45V ,R_L=15
MIN TYP. MAX UNIT
-100
V
-0.95 -1.5
V
-1.3 -2.0
V
-1.55 -2.5
V
-100
A
-4.0
mA
2000
15000
1000
0.8
s
2.0
s
2.5
s
2