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| 2SB1017_2014 Datasheet, PDF (2/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
VBE
Base-emitter on voltage
IC=-3A ;VCE=-5V
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
VCB=-80V; IE=0
VEB=-5V; IC=0
IC=-0.5A ; VCE=-5V
hFE-2
DC current gain
IC=-3A ; VCE=-5V
fT
Transition frequency
IC=-0.5A; VCE=-5V
COB
Collector output capacitance
IE=0, f=1MHz ; VCB=-10V
 hFE-1 Classifications
R
O
Y
40-80 70-140 120-240
Product Specification
2SB1017
MIN TYP. MAX UNIT
-80
V
-1.0 -1.7
V
-1.0 -1.5
V
-30
A
-100
A
40
240
15
9
MHz
130
pF
2
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