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| 2SB1016_2014 Datasheet, PDF (2/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
VBE
Base-emitter voltage
IC=-4A; VCE=-5V
ICBO
IEBO
hFE-1
Collector cut-off current
Emitter cut-off current
DC current gain
VCB=-100V; IE=0
VEB=-5V; IC=0
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-4A ; VCE=-5V
fT
Transition frequency
IC=-1A; VCE=-5V
COB
Collector output capacitance
f=1MHz ; VCB=-10V;IE=0
 hFE-1 Classifications
R
O
Y
40-80 70-140 120-240
Product Specification
2SB1016
MIN TYP. MAX UNIT
-100
V
-2.0
V
-1.5
V
-100
A
-1
mA
40
240
20
5
MHz
270
pF
2
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