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| 2SB1015_2014 Datasheet, PDF (2/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(BR) Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
VBE
Base-emitter voltage
IC=-0.5A ;VCE=-5V
ICBO
Collector cut-off current
VCB=-60V; IE=0
IEBO
Emitter cut-off current
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
hFE-2
DC current gain
IC=-3A ; VCE=-5V
fT
Transition frequency
IC=-0.5A; VCE=-5V
COB
Collector output capacitance
f=1MHz ; VCB=-10V
Switching times
ton
Trun-on time
ts
Storage time
tf
Fall time
RL=15 ;VCC=-30V
IB1=-IB2=-0.2A
Duty cycle 1%
 hFE-1 Classifications
O
Y
60-120
100-200
Product Specification
2SB1015
MIN TYP. MAX UNIT
-60
V
-1.7
V
-1.0
V
-100
A
-100
A
60
200
20
9
MHz
150
pF
0.4
s
1.7
s
0.5
s
2
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