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| 2SB1007_2014 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-2mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-50 A ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50 A ;IC=0
VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA
ICBO
Collector cut-off current
VCB=-50V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE
DC current gain
IC=-0.1A ; VCE=-3V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
fT
Transition frequency
IE=50mA ; VCE=-10V
 hFE Classifications
P
Q
82-180
120-270
R
180-390
Product Specification
2SB1007
MIN TYP. MAX UNIT
-80
V
-80
V
-5
V
-0.2 -0.4
V
-0.5
A
-0.5
A
82
390
14
20
pF
100
MHz
2
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