2SA913_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO
Base-emitter
breakdown voltage
2SA913
2SA913A
I_C=-0.1mA ,I_B=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=-10 A ,I_C=0
V_CEsat
Collector-emitter
saturation voltage
2SA913
I_C=-0.5A; I_B=-50mA
2SA913A I_C=-0.3A; I_B=-30mA
V_BEsat
Base-emitter
saturation voltage
2SA913
I_C=-0.5A; I_B=-50mA
2SA913A I_C=-0.3A; I_B=-30mA
I_CBO
Collector cut-off current
V_CB=-120V; I_E=0
I_EBO
Emitter cut-off current
V_EB=-4V; I_C=0
h_FE-1
DC current gain
I_C=-150mA ; V_CE=-10V
h_FE-2
DC current gain
I_C=-500mA ; V_CE=-5V
C_OB
Output capacitance
I_E=0 ;V_CB=-100V;f=1MHz
f_T
Transition frequency
I_C=50mA ; V_CE=-10V
h_FE-1 Classifications
P
Q
65-110
90-155
R
130-220
S
185-330
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2SA913 2SA913A
MIN TYP. MAX UNIT
-150
V
-180
-5
V
-1.0
V
-1.5
-1.5
V
-1
A
-1
A
65
330
50
15
pF
120
MHz
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