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| 2SA885 Datasheet, PDF (2/5 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type | |||
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JMnic
Silicon PNP Power Transistors
Product Specification
2SA885
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-2mA;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-10 A ;IE=0
VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA
ICBO
Collector cut-off current
VCB=-20V; IE=0
ICEO
Collector cut-off current
VCE=-20V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-10V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=50mA ; VCB=-10V,f=200MHz
MIN TYP. MAX UNIT
-35
V
-45
V
-0.5
V
-0.1
A
-100
A
-10
A
85
340
50
20
30
pF
200
MHz
 hFE-1 Classifications
Q
R
S
85-170 120-240 170-340
2
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