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| 2SA807 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors | |||
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA IB=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
ICBO
Collector cut-off current
VCB=-60V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-3A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-12V
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
VCC=-10V;IC=-3A; RL=3
IB1=-0.3A; IB2=50mA
Product Specification
2SA807
MIN TYP. MAX UNIT
-60
V
-1.5
V
-1.0 mA
-1.0 mA
20
10
MHz
1.2
s
1.8
s
0.3
s
2
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