2SA770 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

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Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO
Collector-emitter
breakdown voltage
2SA770
2SA771
I_C=-25mA ,I_B=0
V_CEsat Collector-emitter saturation voltage I_C=-3A; I_B=-0.3A
I_CBO
Collector
cut-off current
2SA770 V_CB=-60V; I_E=0
2SA771 V_CB=-80V; I_E=0
I_EBO
Emitter cut-off current
V_EB=-6V; I_C=0
h_FE
DC current gain
I_C=-1A ; V_CE=-4V
f_T
Transition frequency
I_C=-0.5A ; V_CE=-12V
Switching times
t_r
Rise time
t_stg
Storage time
t_f
Fall time
I_C=-3A ; V_CC=-9V
I_B1=-I_B2=-0.4A;R_L=3
Product Specification
2SA770 2SA771
MIN TYP. MAX UNIT
-60
V
-80
-1.0
V
-1.0 mA
-1.0 mA
40
10
MHz
0.9
s
1.0
s
0.1
s
2