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| 2SA757_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=
V(BR)CBO Collector-base breakdown voltage IC=-5mA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-5mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-1A
VBE
Base-emitter on voltage
IC=-1A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-30V; IE=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-5V
 hFE-1 Classifications
A
B
C
25-60 50-120 100-200
Product Specification
2SA757
MIN TYP. MAX UNIT
-100
V
-120
V
-5
V
-1.8
V
-1.5
V
-1
mA
25
200
20
24
MHz
2
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