2SA743 Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO
Collector-emitter
breakdown voltage
2SA743
2SA743A
I_C=-10mA ;R_BE=
V_(BR)CBO
Collector-base
breakdown voltage
2SA743
2SA743A
I_C=-1mA ;I_E=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=-1mA ;I_C=0
V_CEsat Collector-emitter saturation voltage I_C=-1A ;I_B=-0.1A
V_BE
Base-emitter voltage
I_C=-50mA ; V_CE=-4V
I_CER
Collector
cut-off current
2SA743 V_CE=-50V; R_BE=1k
2SA743A V_CE=-80V; R_BE=1k
h_FE-1
DC current gain
I_C=-50mA ; V_CE=-4V
h_FE-2
DC current gain
I_C=-1A ; V_CE=-4V
f_T
Transition frequency
I_C=-30mA ; V_CE=-4V
‹ h_FE-1 Classifications
B
C
60-120
100-200
Product Specification
2SA743 2SA743A
MIN TYP. MAX UNIT
-50
V
-80
-50
V
-80
-4
V
-0.75 -1.5
V
-0.65 -1.0
V
-20
A
-20
A
60
200
20
120
MHz
2