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| 2SA740_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA
VBE
Base-emitter on voltage
IC=-500mA ; VCE=-10V
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-500mA ; VCE=-10V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-500mA ; VCE=-10V
Product Specification
2SA740
MIN TYP. MAX UNIT
-150
V
-1.5
V
-1.0
V
-20
A
-10
A
40
140
90
pF
8
MHz
2
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