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| 2SA715 Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial | |||
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JMnic
Silicon PNP Power Transistors
Product Specification
2SA715
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; RBE=
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-2.0A ;IB=-0.2A(Pulse test)
VBE
Base-emitter voltage
IC=-1.5A;VCE=-2V(Pulse test)
ICBO
Collector cut-off current
VCB=-35V; IE=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
hFE-2
DC current gain
IC=-1.5A ; VCE=-2V(Pulse test)
fT
Transition frequency
IC=-0.2A ; VCE=-2V(Pulse test)
 hFE-1 Classifications
B
C
D
60-120 100-200 160-320
MIN TYP. MAX UNIT
-35
V
-35
V
-5
V
-0.5 -1.0 V
-1.0 -1.5 V
-20
A
60
320
20
160
MHz
2
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