2SA663 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=-25mA ;I_B=0
V_(BR)CBO Collector-base breakdown voltage I_C=-1mA ;I_E=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=-1mA ;I_C=0
V_CEsat Collector-emitter saturation voltage I_C=-4A; I_B=-0.4A
V_BEsat Base-emitter saturation voltage
I_C=-4A; I_B=-0.4A
I_CBO
Collector cut-off current
V_CB=-100V; I_E=0
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
h_FE
DC current gain
I_C=-1A ; V_CE=-5V
f_T
Transition frequency
I_C=-1A ; V_CE=-5V
Product Specification
2SA663
MIN TYP. MAX UNIT
-100
V
-100
V
-5
V
-2.0
V
-2.5
V
-0.1 mA
-0.1 mA
30
200
6
MHz
2