2SA656_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=-25mA ;I_B=0
V_(BR)CBO Collector-base breakdown voltage I_C=-1mA ;I_E=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=-1mA ;I_C=0
V_CEsat Collector-emitter saturation voltage I_C=-5A; I_B=-1A
V_BEsat Base-emitter saturation voltage
I_C=-5A; I_B=-1A
I_CBO
Collector cut-off current
V_CB=-130V; I_E=0
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
h_FE
DC current gain
I_C=-1A ; V_CE=-5V
C_OB
Collector output capacitance
I_E=0; V_CB=-10V;f=1MHz
f_T
Transition frequency
I_C=-1A ; V_CE=-10V
Product Specification
2SA656
MIN TYP. MAX UNIT
-130
V
-130
V
-5
V
-2.0
V
-2.5
V
-0.1 mA
-0.1 mA
30
300
150
pF
5
MHz
2