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| 2SA483_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-0.5mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-10V
ICBO
Collector cut-off current
VCB=-150V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-0.1A ; VCE=-10V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1.0MHz
fT
Transition frequency
IC=-0.1A ; VCE=-10V
 hFE Classifications
R
O
Y
30-80 70-140 120-240
Product Specification
2SA483
MIN TYP. MAX UNIT
-150
V
-150
V
-1.8
V
-1.8
V
-0.1 mA
-0.1 mA
30
240
50
pF
10
MHz
2
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