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| 2SA1943 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS) | |||
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-8A IB=-0.8A
VBE
Base-emitter voltage
IC=-7A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-230V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-7A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-5V
COB
Collector output capacitance
f=1MHz;VCB=-10V
 hFE-1 classifications
R
O
55-110
80-160
Product Specification
2SA1943
MIN TYP. MAX UNIT
-230
V
-3.0
V
-1.5
V
-5
A
-5
A
55
160
35
30
MHz
360
pF
2
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