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| 2SA1908 Datasheet, PDF (2/4 Pages) Sanken electric – Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) | |||
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-3A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-12V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-4A;RL=10
IB1=-IB2=-0.4A
VCC=-40V
 hFE classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SA1908
MIN TYP. MAX UNIT
-120
V
-0.5
V
-10
A
-10
A
50
180
20
MHz
300
pF
0.14
s
1.40
s
0.21
s
2
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