2SA1758 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=-1mA ,I_B=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=-50 A ,I_C=0
V_CEsat-1 Collector-emitter saturation voltage I_C=-6A; I_B=-0.3A
V_CEsat-2 Collector-emitter saturation voltage I_C=-8A; I_B=-0.4A
V_BEsat-1 Base-emitter saturation voltage
I_C=-6A; I_B=-0.3A
V_BEsat-2 Base-emitter saturation voltage
I_C=-8A; I_B=-0.4A
I_CBO
Collector cut-off current
V_CB=-100V; I_E=0
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
h_FE
DC current gain
I_C=-2A ; V_CE=-2V
f_T
Transition frequency
I_C=-1A ; V_CE=-10V
‹ h_FE Classifications
D
E
F
60-120 100-200 160-320
Product Specification
2SA1758
MIN TYP. MAX UNIT
-60
V
-5
V
-0.3
V
-0.5
V
-1.2
V
-1.5
V
-10
A
-10
A
60
320
90
MHz
2