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| 2SA1671_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCB=-120V; IE=0
VEB=-6V; IC=0
IC=-3A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-12V
 hFE classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SA1671
MIN TYP. MAX UNIT
-120
V
-6
V
-0.5
V
-10
A
-10
A
50
180
20
MHz
2
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