2SA1645_15 Datasheet, PDF (2/3 Pages) Renesas Technology Corp – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEsat-1 Collector-emitter saturation voltage I_C=-4A; I_B=-0.2A
V_{CEsat -2} Collector-emitter saturation voltage I_C=-6A; I_B=-0.3A
V_{BE sat -1} Base-emitter saturation voltage
I_C=-4A; I_B=-0.2A
V_{BE sat -2} Base-emitter saturation voltage
I_C=-6A; I_B=-0.3A
I_CBO
Collector cut-off current
V_CB=-100V; I_E=0
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
h_FE-1
DC current gain
I_C=-0.5A ; V_CE=-2V
h_FE-2
DC current gain
I_C=-1.5A ; V_CE=-2V
h_FE-3
DC current gain
I_C=-4A ; V_CE=-2V
f_T
Transition frequency
I_C=-1.5A ; V_CE=-10V
C_OB
Collector capacitance
I_E=-0 ; V_CB=-10V;f=1MHz
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
I_C=-4A; I_B1=-I_B2=-0.2A
R_L=12.5 ; V_CC=-50V
‹ h_FE-2 Classifications
M
L
K
100-200 150-300 200-400
Product Specification
2SA1645
MIN TYP. MAX UNIT
-0.3
V
-0.5
V
-1.2
V
-1.5
V
-10
A
-10
A
100
100
400
60
150
MHz
150
pF
0.3
s
1.5
s
0.4
s
2