2SA1389_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=-1mA ;I_B=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=-50 A; I_C=0
V_CEsat Collector-emitter saturation voltage I_C=-5A;I_B=-0.5A
V_BE
Base-emitter voltage
I_C=-5A;V_CE=-5V
I_CBO
Collector cut-off current
V_CB=-160V; I_E=0
I_CEO
Collector cut-off current
V_CE=-160V; I_B=0
I_EBO
Emitter cut-off current
V_EB=-7V; I_C=0
h_FE-1
DC current gain
I_C=-1A ; V_CE=-5V
h_FE-2
DC current gain
I_C=-7A ; V_CE=-5V
f_T
Transition frequency
I_C=-1A ; V_CE=-10V
Product Specification
2SA1389
MIN TYP. MAX UNIT
-160
V
-7
V
-1.8
V
-1.7
V
-50
A
-1
mA
-50
A
60
200
40
30
MHz
2