2SA1386 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,130W)

JMnic
Silicon PNP Power Transistors
Product Specification
2SA1386 2SA1386A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO
Collector-emitter
breakdown voltage
2SA1386
2SA1386A
I_C=-25mA ;I_B=0
V_CEsat
Collector-emitter saturation voltage I_C=-5A; I_B=-0.5A
I_CBO
Collector cut-off
Current
2SA1386 V_CB=-160V; I_E=0
2SA1386A V_CB=-180V; I_E=0
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
h_FE
DC current gain
I_C=-5A ; V_CE=-4V
C_ob
Output capacitance
I_E=0 ; V_CB=10V;f=1MHz
f_T
Transition frequency
I_C=-2A ; V_CE=-12V
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
I_C=-5A;R_L=4
I_B1=-I_B2=-1A
V_CC=40V
‹ h_FE Classifications
O
P
Y
50-100 70-140 90-180
MIN TYP. MAX UNIT
-160
V
-180
-2.0
V
-100
A
-100
A
50
180
500
pF
40
MHz
0.30
s
0.70
s
0.20
s
2