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| 2SA1105_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
VBEsat Base-emitter saturation voltage
IC=-3A; IB=-0.3A
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-3A ; VCE=4V
fT
Transition frequency
IE=1A ; VCE=-12V
Product Specification
2SA1105
MIN TYP. MAX UNIT
-120
V
-1.5
V
-1.8
V
-100
A
-100
A
50
180
20
MHz
2
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