2SA1065_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=-0.1A ;I_B=0
V_CEsat Collector-emitter saturation voltage I_C=-10A ;I_B=-1A
V_BE
Base-emitter on voltage
I_C=-10A;V_CE=-5V
I_CBO
Collector cut-off current
V_CB=-70V; I_E=0
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
h_FE-1
DC current gain
I_C=-2A ; V_CE=-5V
h_FE-2
DC current gain
I_C=-10A ; V_CE=-5V
f_T
Transition frequency
I_C=-0.5A ; V_CE=-5V
‹ h_FE-1 Classifications
R
Q
P
O
40-80 60-120 90-180 140-280
Product Specification
2SA1065
MIN TYP. MAX UNIT
-150
V
-2.0
V
-2.5
V
-1
mA
-2
mA
40
280
20
50
MHz
2