2SA1011_15 Datasheet, PDF (2/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,RBE=
V_(BR)CBO Collector-base breakdown voltage
I_C=-1mA; I_E=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=-1mA; I_C=0
V_CEsat Collector-emitter saturation voltage I_C=-0.5A; I_B=-50mA
V_BE
Base-emitter voltage
I_C=-10mA ; V_CE=-5V
I_CBO
Collector cut-off current
V_CB=-120V; I_E=0
I_EBO
Emitter cut-off current
V_EB=-4V; I_C=0
h_FE
DC current gain
I_C=-0.3A ; V_CE=-5V
f_T
Transition frequency
I_C=-50mA ; V_CE=-10V
C_ob
Output capacitance
I_E=0; f=1MHz ; V_CB=-10V
Switching times resistive load
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
I_C=-0.5A ;I_B1=-I_B2=-50mA
V_CC=20V; R_L=40
‹ h_FE Classifications
D
E
60-120 100-200
Product Specification
2SA1011
MIN TYP. MAX UNIT
-160
V
-180
V
-6
V
-0.5
V
-1.5
V
-10
A
-10
A
60
200
100
MHz
30
pF
0.29
s
0.48
s
0.19
s
2