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| 2N6359 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
Product Specification
2N6359
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=8A ;IB=0.8A
VCEsat-2 Collector-emitter saturation voltage IC=16A; IB=3.2A
VBE
Base-emitter on voltage
IC=8A ; VCE=4V
ICEO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCE=80V; IB=0
VCE=100V; VBE(off)=1.5V
TC=150
VEB=7V; IC=0
hFE-1
DC current gain
IC=8A ; VCE=4V
hFE-2
DC current gain
IC=16A ; VCE=4V
fT
Transition freuqency
IC=1A ; VCE=4V
MIN TYP. MAX UNIT
80
V
1.4
V
4.0
V
2.2
V
2.0
mA
2.0
10.0
mA
5.0
mA
15
60
5
0.2
MHz
2
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