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| 2N6358 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=10A ;IB=40mA
VCEsat-2 Collector-emitter saturation voltage IC=20A ;IB=1A
VBE sat Base-emitter saturation voltage
VBE
Base-emitter on voltage
ICEO
Collector cut-off current
IC=20A ;IB=1A
IC=10A ; VCE=4V
VCE=60V;IB=0
ICBO
Collector cut-off current
VCB=80V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=5V
hFE-2
DC current gain
IC=20A ; VCE=5V
Product Specification
2N6358
MIN TYP. MAX UNIT
60
V
2.0
V
4.0
V
4.0
V
2.8
V
1.0
mA
0.5
mA
5.0
mA
1500
10000
100
2
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