2N6354_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdwon voltage I_C=0.2A ;I_B=0
V_(BR)EBO Emitter-base breakdwon voltage
I_E=5m A ;I_C=0
V_CEsat-1 Collector-emitter saturation voltage I_C=5A ;I_B=0.5A
V_CEsat-2 Collector-emitter saturation voltage I_C=10A; I_B=1A
V_{BE sat-1} Base-emitter saturation voltage
I_C=5A ;I_B=0.5A
V_{BE sat-2} Base-emitter saturation voltage
I_CEO
Collector cut-off current
I_CEV
Collector cut-off current
I_C=10A; I_B=1A
V_CE=100V;V_BE=0
T_C=125
V_CE=140V; I_B=0
I_CBO
Collector cut-off current
V_CB=150V; I_E=0
I_EBO
Emitter cut-off current
V_EB=5V; I_C=0
h_FE-1
DC current gain
I_C=5A ; V_CE=2V
h_FE-2
DC current gain
I_C=10A ; V_CE=2V
Product Specification
2N6354
MIN TYP. MAX UNIT
120
V
6.5
V
0.5
V
1.0
V
1.3
V
2.0
V
10
mA
10
20
mA
5
mA
5
mA
20
150
10
100
2