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| 2N6249_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N6249 2N6250 2N6251
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6249
2N6250 IC=200mA ; IB=0
2N6251
200
275 V
350
VCE(sat)
Collector-emitter
saturation voltage
2N6249 IC=10A;IB=1.0A
2N6250 IC=10A;IB=1.25 A
2N6251 IC=10A;IB=1.67 A
VBE(sat)
ICEV
Base-emitter saturation
voltage
Collector cut-off current
2N6249
2N6250
2N6251
2N6249
IC=10A;IB=1.0A
IC=10A;IB=1.25 A
IC=10A;IB=1.67 A
VCE=RatedVCEV;VBE=-1.5V
TC=125
VCE=150V;IB=0
ICEO
Collector cut-off current
2N6250 VCE=225V;IB=0
2N6251 VCE=300V;IB=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
2N6249
10
1.5
V
2.25 V
5.0
10
mA
5.0 mA
1.0 mA
50
hFE
DC current gain
2N6250 IC=10A ; VCE=3V
2N6251
8
50
6
50
fT
Transition frequency
Second breakdown collector current
Is/b
With base forward biased
Switching times
tr
Rise time
ts
Storage time
tf
Fall time
IC=1A ; VCE=10V
2.5
VCE=30V,t=1.0s,
Nonrepetitive
5.8
For 2N6249
IC=10A; IB1=-IB2=1.0A;VCC=200V
For 2N6250
IC=10A;IB1=-IB2=1.25A;VCC=200V
For 2N6251
IC=10A;IB1=-IB2=1.67A;VCC=200V
MHz
A
2.0
s
3.5
s
1.0
s
JMnic
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