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| 2N6129_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N6129 2N6130 2N6131
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustioning voltage
2N6129
2N6130
2N6131
IC=0.1A ;IB=0
VCEsat
Collector-emitter
saturation voltage
2N6129
2N6130
2N6131
IC=7A;IB=1.2A
VBE
Base-emitter on voltage
IC=2.5A ; VCE=4V
2N6129
VCE=40V;VBE=1.5V
TC=150
ICEV
Collector cut-off current 2N6130
VCE=60V;VBE=1.5V
TC=150
2N6131
VCE=80V; VBE=1.5V
TC=150
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=2.5A ; VCE=4V
fT
Transition frequency
IC=0.2A ; VCE=4V
MIN TYP. MAX UNIT
40
60
V
80
1.4
V
1.8
1.4
V
0.5
3.0
mA
0.5
3.0
0.5
3.0
mA
1.0
mA
20
100
2.5
MHz
JMnic
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