2N5881 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N5881 2N5882
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO(sus)
Collector-emitter sustaining
voltage
2N5881
2N5882
I_C=0.2A ;I_B=0
V_CEsat-1 Collector-emitter saturation voltage
I_C=7A;I_B=0.7A
V_CEsat-2 Collector-emitter saturation voltage
I_C=15A;I_B=3.75A
V_BEsat Collector-emitter saturation voltage
I_C=15A;I_B=3.75A
V_BE
Collector-emitter on voltage
I_C=6A ; V_CE=4V
I_CBO
Collector cut-off current
V_CB=ratedV_CBO; I_B=0
I_CEO
Collector cut-off current
I_CEX
Collector cut-off current
I_EBO
Emitter cut-off current
2N5881 V_CE=30V; I_B=0
2N5882
V_CE=40V; I_B=0
V_CE=ratedV_CE; V_BE=1.5V
T_C=150
V_EB=5V; I_C=0
h_FE-1
DC current gain
I_C=2A ; V_CE=4V
h_FE-2
DC current gain
I_C=6A ; V_CE=4V
h_FE-3
DC current gain
I_C=15A ; V_CE=4V
f_T
Trainsistion frequency
I_C=1A ; V_CE=10V
MIN TYP. MAX UNIT
60
V
80
1.0
V
4.0
V
2.5
V
1.5
V
0.5
mA
1.0
mA
0.5
5.0
mA
1.0
mA
35
20
100
4
4
MHz
JMnic