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| 2N5655_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N5655 2N5656 2N5657
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5655
2N5656 IC=0.1A; IB=0;L=50mH
2N5657
VCEsat-1
VCEsat-2
VCEsat-3
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
IC=100mA ;IB=10mA
IC=250mA ;IB=25mA
IC=500mA ;IB=100mA
VBE
Emitter-base on voltage
IC=100mA ; VCE=10V
2N5655 VCE=150V; IB=0
ICEO
Collector cut-off current 2N5656 VCE=200V; IB=0
2N5657 VCE=250V; IB=0
2N5655 VCB=275V; IE=0
ICBO
Collector cut-off current 2N5656 VCB=325V; IE=0
2N5657 VCB=375V; IE=0
ICEX
Collector cut-off current
VCE= Rated VCEO; VBE(off)=1.5V
TC=100
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE-1
hFE-2
hFE-3
DC current gain
DC current gain
DC current gain
IC=50mA ; VCE=10V
IC=100mA ; VCE=10V
IC=250mA ; VCE=10V
hFE-4
DC current gain
IC=500mA ; VCE=10V
fT
Transition frequency
IC=50mA ; VCE=10V;f=10MHz
COB
Output capacitance
f=100kHz ; VCB=10V;IE=0
MIN TYP. MAX UNIT
250
300
V
350
1.0
V
2.5
V
10
V
1.0
V
0.1 mA
10
A
0.1
1.0
mA
10
A
25
30
250
15
5
10
MHz
25
pF
JMnic
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