 English |
|
|
|
|
|
|
|
| 2N5632 Datasheet, PDF (2/3 Pages) Central Semiconductor Corp – SILICON POWER TRANSISTOR | |||
| |||
| ◁ |
Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N5632 2N5633 2N5634
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
VCEO(sus)
Collector-emitter
sustaining voltage
2N5632
2N5633
2N5634
VCEsat-1 Collector-emitter saturation voltage
VCEsat-2 Collector-emitter saturation voltage
VBEsat Collector-emitter saturation voltage
VBE
Base-emitter on voltage
2N5632
ICEO
Collector cut-off current 2N5633
2N5634
ICEV
Collector cut-off current
(VBE(off)=1.5V)
IEBO
Emitter cut-off current
2N5632
hFE
DC current gain
2N5633
2N5634
fT
Transition frequency
CONDITIONS
IC=0.2A ;IB=0
IC=7A; IB=0.7A
IC=10A ;IB=2A
IC=10A ;IB=2A
IC=5A ; VCE=5V
VCE=50V; IB=0
VCE=60V; IB=0
VCE=70V; IB=0
VCE=ratedVCB
VCE=ratedVCB; TC=150
VEB=7V; IC=0
IC=5A ; VCE=5V
IC=1A ; VCE=20V
MIN TYP. MAX UNIT
100
120
V
140
1.0
V
3.0
V
2.5
V
1.5
V
1.0
mA
1.0
mA
5.0
1.0
mA
25
100
20
80
15
60
1.0
MHz
JMnic
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese