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| 2N5631 Datasheet, PDF (2/3 Pages) ON Semiconductor – POWER TRANSISTORS COMPLEMENTARY SILICON | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N5631
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1A
VCEsat-2 Collector-emitter saturation voltage IC=16A ;IB=4A
VBEsat Collector-emitter saturation voltage IC=10A; IB=1A
VBE
Base-emitter on voltage
IC=8A ; VCE=2V
ICBO
Collector cut-off current
VCB=ratedVCBO; IE=0
ICEO
Collector cut-off current
VCE=70V; IB=0
ICEX
Collector cut-off current
(VBE(off)=1.5V)
VCE=ratedVCB
VCE=ratedVCB; TC=150
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=8A ; VCE=2V
hFE-2
DC current gain
IC=16A ; VCE=2V
COB
Output capacitance
IE=0 ; VCB=10V ;f=0.1MHz
fT
Transition frequency
IC=1A ; VCE=20V ;f=0.5MHz
MIN TYP. MAX UNIT
140
V
1.0
V
2.0
V
1.8
V
1.5
V
2.0 mA
2.0 mA
2.0
mA
7.0
5.0 mA
15
60
4
500 pF
1.0
MHz
JMnic
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