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| 2N5629_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N5629 2N5630
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(sus)
Collector-emitter
sustaining voltage
2N5629
2N5630
IC=0.2A ;IB=0
100
120
V
VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1A
1.0
V
VCEsat-2 Collector-emitter saturation voltage IC=16A ;IB=4A
2.0
V
VBEsat Collector-emitter saturation voltage IC=10A; IB=1A
1.8
V
VBE
Base-emitter on voltage
IC=8A ; VCE=2V
1.5
V
ICBO
Collector cut-off current
VCB=ratedVCBO; IE=0
1.0
mA
2N5629 VCE=50V; IB=0
ICEO
Collector cut-off current
2N5630 VCE=60V; IB=0
1.0
mA
ICEV
Collector cut-off current
(VBE(off)=1.5V)
VCE=ratedVCB
VCE=ratedVCB; TC=150
1.0
mA
5.0
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
2N5629
25
100
hFE-1
DC current gain
IC=8A ; VCE=2V
2N5630
20
80
hFE-2
DC current gain
IC=16A ; VCE=2V
4
COB
Output capacitance
IE=0 ; VCB=10V ;f=0.1MHz
500
pF
fT
Transition frequency
IC=1A ; VCE=20V
1.0
MHz
JMnic
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