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| 2N5621_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
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Product Specification
www.jmnic.com
Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter
sustaining voltage
2N5621
2N5623/5625 IC=50mA ;IB=0
2N5627
VCEsat Collector-emitter saturation voltage
IC=5A; IB=0.5A
VBE
Base-emitter on voltage
IC=5A ; VCE=5V
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
2N5621/5625
2N5623/5627
IC=5A ; VCE=5V
2N5621/5625
fT
Transition frequency
IC=1A ; VCE=12V
2N5623/5627
MIN TYP. MAX UNIT
60
80
V
100
2.0
V
1.5
V
0.1 mA
0.1 mA
70
200
30
90
40
MHz
30
JMnic
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