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| 2N5605 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors | |||
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Product Specification
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Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter
sustaining voltage
2N5605
2N5607/5609 IC=50mA ;IB=0
2N5611
VCEsat Collector-emitter saturation voltage
IC=1A; IB=0.1A
VBE
Base-emitter on voltage
IC=2.5A ; VCE=5V
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
ICEO
Collector cut-off current
VCE= Rated VCEO,IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
2N5605/5609
2N5607/5611
IC=2.5A ; VCE=5V
2N5605/5609
fT
Transition frequency
IC=0.5A ; VCE=10V
2N5607/5611
MIN TYP. MAX UNIT
60
80
V
100
0.5
V
1.5
V
0.1 mA
1.0 mA
0.1 mA
70
200
30
90
70
MHz
60
JMnic
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