2N5190 Datasheet, PDF (2/3 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR GENERAL PURPOSE POWER

Product Specification
Silicon NPN Power Transistors
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2N5190 2N5191 2N5192
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO
Collector-emitter
sustaining voltage
2N5190
2N5191 IC=0.1A; IB=0
2N5192
V_CEsat-1
V_CEsat-2
V_BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Emitter-base on voltage
I_C=1.5A ;I_B=0.15A
I_C=4A ;I_B=1A
I_C=1.5A ; V_CE=2V
2N5190 V_CE=40V; I_B=0
I_CEO
Collector cut-off current 2N5191 V_CE=60V; I_B=0
2N5192 V_CE=80V; I_B=0
2N5190 V_CB=40V; I_E=0
I_CBO
Collector cut-off current 2N5191 V_CB=60V; I_E=0
2N5192 V_CB=80V; I_E=0
2N5190
V_CE=40V; V_BE(off)=1.5V
T_C=125
I_CEX
Collector cut-off current
2N5191
V_CE=60V; V_BE(off)=1.5V
T_C=125
2N5192
V_CE=80V; V_BE(off)=1.5V
T_C=125
I_EBO
Emitter cut-off current
V_EB=5V; I_C=0
2N5190
h_FE-1
DC current gain
2N5191 IC=1.5A ; VCE=2V
2N5192
2N5190
h_FE-2
DC current gain
2N5191 IC=4A ; VCE=2V
2N5192
f_T
Transition frequency
I_C=1A ; V_CE=10V;f=1MHz
MIN TYP. MAX UNIT
40
60
V
80
0.6
V
1.4
V
1.2
V
1.0 mA
0.1 mA
0.1
2.0
0.1
2.0
mA
0.1
2.0
1.0 mA
25
100
20
80
10
7
2
MHz
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