2N5067 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
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2N5067 2N5068 2N5069
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N5067
40
V_CEO
Collector-emitter
sustaining voltage
2N5068 IC=0.2A ;IB=0
60
V
2N5069
80
V_CEsat-1 Collector-emitter saturation voltage I_C=1A; I_B=0.1A
0.4
V
V_CEsat-2 Collector-emitter saturation voltage I_C=5A ;I_B=1A
1.5
V
V_BE
Base-emitter on voltage
I_CEO
Collector cut-off current
I_CBO
Collector cut-off current
I_CEX
Collector cut-off current
I_EBO
Emitter cut-off current
I_C=1A ; V_CE=2V
V_CE=Rated V_CEO; I_B=0
V_CB=Rated V_CBO; I_E=0
V_CE= Rated V_CEO; V_BE(off)=1.5V
T_C=150
V_EB=5V; I_C=0
1.2
V
1.0 mA
0.1 mA
1.0
2.0
mA
1.0 mA
h_FE-1
DC current gain
I_C=1A ; V_CE=2V
20
80
h_FE-2
DC current gain
I_C=5A ; V_CE=2V
7
f_T
Transition frequency
I_C=1A ; V_CE=10V
4
MHz
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