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2N5050_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors
Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N5050 2N5051 2N5052
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
VCEO(sus)
Collector-emitter
sustaining voltage
2N5050
2N5051
2N5052
VCEsat
VBEsat
VBE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
2N4910
ICEO
Collector cut-off current 2N4911
2N4912
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
CONDITIONS
IC=0.1A ;IB=0
IC=2A; IB=0.5A
IC=2A; IB=0.5A
IC=750mA ; VCE=5V
VCE=125V; IB=0
VCE=150V; IB=0
VCE=200V; IB=0
VCB=Rated VCBO; IE=0
VEB=7V; IC=0
IC=750mA ; VCE=5V
IC=500mA;VCE=10V;f=1MHz
MIN TYP. MAX UNIT
125
150
V
200
1.2
V
1.5
V
1.2
V
5.0 mA
0.1 mA
1.0 mA
25
100
10
MHz
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