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| 2N4921 Datasheet, PDF (2/3 Pages) ON Semiconductor – 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N4921 2N4922 2N4923
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter
sustaining voltage
2N4921
2N4922 IC=0.1A; IB=0
2N4923
VCEsat
VBEsat
VBE
Collector-emitter saturation voltage
Emitter-base saturation voltage
Emitter-base on voltage
IC=1.0A ;IB=0.1A
IC=1.0A ;IB=0.1A
IC=1A ; VCE=1V
2N4921 VCE=20V; IB=0
ICEO
Collector cut-off current 2N4922 VCE=30V; IB=0
2N4923 VCE=40V; IB=0
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCB= Rated VCBO ;IE=0
VCE= Rated VCEO; VBE(off)=1.5V
TC=125
VEB=5V; IC=0
hFE-1
DC current gain
IC=50mA ; VCE=1V
hFE-2
DC current gain
IC=500mA ; VCE=1V
hFE-3
DC current gain
IC=1A ; VCE=1V
fT
Transition frequency
COB
Output capacitance
IC=250mA ; VCE=10V;f=1MHz
f=100kHz ; VCB=10V;IE=0
MIN TYP. MAX UNIT
40
60
V
80
0.6
V
1.3
V
1.3
V
0.5 mA
0.1 mA
0.1
0.5
mA
1.0 mA
40
30
150
10
3.0
MHz
100 pF
JMnic
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