BF1206_15 Datasheet, PDF (17/21 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual N-channel dual-gate MOS-FET

Philips Semiconductors
Dual N-channel dual-gate MOS-FET
Product specification
BF1206
10²
handbook, halfpage
Yis
(mS)
10
1
10^−1
MLE284
bis
gis
10³
handbook, halfpage
yrs
(µS)
10²
10
MLE285 _−103
ϕ_rs
(deg)
ϕ_rs
−10²
yrs
−10
10^−2
10
10²
10³
f (MHz)
1
10
−1
10²
10³
f (MHz)
V_DS = 5 V; V_G2 = 4 V; I_D = 12 mA; T_amb = 25 °C.
Fig.31 Input admittance as a function of frequency;
typical values; amplifier b.
V_DS = 5 V; V_G2 = 4 V; I_D = 12 mA; T_amb = 25 °C.
Fig.32 Reverse transfer admittance and phase as
a function of frequency; typical values;
amplifier b.
10²
handbook, halfpage
yfs
(mS)
10
yfs
−ϕ_fs
MLE286 _−102
ϕ_fs
(deg)
−10
10²
handbook, halfpage
Yos
(mS)
10
1
MLE287
bos
gos
1
10
10²
−1
10³
10^−1
10
10²
10³
f (MHz)
f (MHz)
V_DS = 5 V; V_G2 = 4 V; I_D = 12 mA; T_amb = 25 °C.
Fig.33 Forward transfer admittance and phase as
a function of frequency; typical values;
amplifier b.
V_DS = 5 V; V_G2 = 4 V; I_D = 12 mA; T_amb = 25 °C.
Fig.34 Output admittance as a function of
frequency; typical values; amplifier b.
2003 Nov 17
17