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BF1205C_15 Datasheet, PDF (14/22 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual N-channel dual gate MOS-FET
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Philips Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
24
ID
(mA)
16
8
001aaa574
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
16
ID
(mA)
12
8
4
001aaa575
(1)
(2)
(3)
(4)
(5)
0
0
2
4
6
VGG = VDS (V)
(1) RG1(b) = 68 kΩ.
(2) RG1(b) = 82 kΩ.
(3) RG1(b) = 100 kΩ.
(4) RG1(b) = 120 kΩ.
(5) RG1(b) = 150 kΩ.
(6) RG1(b) = 180 kΩ.
(7) RG1(b) = 220 kΩ.
(8) RG1(b) = 270 kΩ.
VG2-S = 4 V; VDS(a) = VG1-S(a) = 0 V; Tj = 25 °C;
RG1(b) is connected to VGG; see Figure 3.
Fig 23. Drain current as a function of gate 1 (VGG),
drain supply voltage and value of RG1; typical
values.
0
0
2
4
6
VG2-S (V)
(1) VGG = 5.0 V.
(2) VGG = 4.5 V.
(3) VGG = 4.0 V.
(4) VGG = 3.5 V.
(5) VGG = 3.0 V.
VDS(b) = 5 V; VDS(a) = VG1-S(a) = 0 V; Tj = 25 °C;
RG1(b) = 150 kΩ (connected to VGG); see Figure 3.
Fig 24. Drain current as a function of gate 2 voltage;
typical values.
BF1205C_2
Product data sheet
Rev. 02 — 15 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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