BF904_15 Datasheet, PDF (10/14 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – N-channel dual gate MOS-FETs

NXP Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF904; BF904R
Table 1 Scattering parameters: V_DS =5 V; V_G2-S = 4 V; I_D = 10 mA
f
(MHz)
S₁₁
MAGNITUDE
(ratio)
ANGLE
(deg)
S₂₁
MAGNITUDE
(ratio)
ANGLE
(deg)
S₁₂
MAGNITUDE
(ratio)
40
100
200
300
400
500
600
700
800
900
1 000
1 200
1 400
1 600
1 800
2 000
2 200
2 400
2 600
2 800
3 000
0.989
0.985
0.976
0.958
0.942
0.918
0.899
0.876
0.852
0.823
0.800
0.750
0.719
0.682
0.642
0.602
0.547
0.596
0.682
0.771
0.793
−3.4
−8.3
−16.4
−24.1
−32.0
−39.3
−46.0
−52.6
−58.8
−64.9
−70.9
−82.4
−92.7
−102.5
−109.8
−116.5
−124.9
−128.7
−132.6
−142.5
−157.5
2.420
2.414
2.368
2.301
2.251
2.170
2.080
2.001
1.924
1.829
1.747
1.621
1.535
1.424
1.349
1.283
1.130
1.018
0.979
0.804
0.541
175.7
169.1
158.8
148.5
138.8
129.5
120.7
112.1
103.2
94.7
86.5
70.7
54.6
39.4
22.5
1.1
−15.1
−49.1
−79.4
−116.2
−153.5
0.000
0.001
0.003
0.004
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.008
0.010
0.013
0.018
0.014
0.040
0.077
0.120
0.149
ANGLE
(deg)
79.9
78.3
80.3
73.7
70.7
67.2
67.8
68.6
72.9
78.7
88.3
120.5
139.8
137.8
156.8
175.1
172.6
−163.9
−164.0
178.8
158.3
S₂₂
MAGNITUDE
(ratio)
0.993
0.992
0.987
0.980
0.974
0.966
0.958
0.951
0.944
0.937
0.933
0.928
0.930
0.924
0.928
0.928
0.887
0.837
0.778
0.629
0.479
ANGLE
(deg)
−1.6
−3.9
−7.8
−11.4
−15.2
−18.7
−22.2
−25.5
−28.9
−32.1
−35.2
−41.7
−48.4
−54.9
−62.9
−73.1
−81.0
−95.8
−109.6
−119.5
−119.9
Table 2 Noise data: V_DS = 5 V; V_G2-S = 4 V; I_D = 10 mA
f
(MHz)
F_min
(dB)
Γ_opt
(ratio)
800
2.00
0.686
(deg)
49.6
r_n
50.40
Rev. 06 - 13 November 2007
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