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| BF1100WR_15 Datasheet, PDF (10/14 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual-gate MOS-FET | |||
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Philips Semiconductors
Dual-gate MOS-FET
Product speciï¬cation
BF1100WR
handboo1k,0h2alfpage
y is
(mS)
10
1
10 1
10
MLD185
b is
g is
102
f (MHz)
10 3
VDS = 12 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.22 Input admittance as a function of
frequency; typical values.
10 3
y rs
(µS)
10 2
10
MLD186 10 3
Ï rs
(deg)
Ï rs
10 2
y rs
10
1
10
1
102
f (MHz)
10 3
VDS = 12 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.23 Reverse transfer admittance and phase as
a function of frequency; typical values.
10 2
y fs
(mS)
10
1
10
MLD187
10 2
handbook1,0halfpage
yos
y fs
Ïfs
(mS)
(deg)
1
Ï fs
10
10 1
102
f (MHz)
1
10 3
10 2
10
MLD188
bos
gos
102
f (MHz)
10 3
VDS = 12 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.24 Forward transfer admittance and phase as
a function of frequency; typical values.
VDS = 12 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.25 Output admittance as a function of
frequency; typical values.
1995 Apr 25
10
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